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| APTGF90DDA60T3G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Dual Boost chopper NPT IGBT Power Module | |||
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APTGF90DDA60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 100A
Tj = 25°C
Tj = 125°C
2 2.5 V
2.2
VGE = VCE , IC = 1.5mA
4.5 5.5 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V ; VCE = 25V
f = 1MHz
4.3
nF
0.4
VGE= 15V ; VCE=300V
IC=100A
240
nC
Inductive Switching (25°C)
25
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
10
ns
130
20
Inductive Switching (125°C)
25
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
11
ns
150
30
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
Tj = 125°C
Tj = 125°C
1
3
mJ
VGE â¤15V ; VBus = 360V
tp ⤠10µs ; Tj = 125°C
450
A
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
600
Tj = 25°C
Tj = 125°C
V
100
µA
500
IF DC Forward Current
VF Diode Forward Voltage
IF = 100A
IF = 200A
IF = 100A
Tc = 80°C
Tj = 125°C
100
A
1.6 2
2
V
1.3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
160
IF = 100A
VR = 400V
Tj = 125°C
220
ns
di/dt =200A/µs Tj = 25°C
290
nC
Tj = 125°C
1530
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2-5
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