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| APTC80H29SCTG Datasheet, PDF (2/7 Pages) Microsemi Corporation – Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module | |||
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APTC80H29SCTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 800V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 7.5A
VGS = VDS, ID = 1mA
2.1
VGS = ±20 V, VDS = 0V
25 µA
250
290 mâ¦
3 3.9 V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 400V
ID = 15A
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 15A
RG = 5â¦
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5â¦
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5â¦
Min Typ Max Unit
2254
1046
pF
54
91
12
nC
46
10
13
ns
83
35
146
µJ
139
255
µJ
171
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=200V
IF = 30A
IF = 60A
IF = 30A
200
V
Tj = 25°C
Tj = 125°C
250 µA
500
Tc = 85°C
30
A
1.1 1.15
1.4
V
Tj = 125°C
0.9
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
24
IF = 30A
VR = 133V
Tj = 125°C
48
ns
di/dt = 200A/µs Tj = 25°C
33
nC
Tj = 125°C
150
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