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| APTC60TAM24TPG Datasheet, PDF (2/6 Pages) Microsemi Corporation – Triple phase leg Super Junction MOSFET Power Module | |||
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APTC60TAM24TPG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
350 µA
600
RDS(on) Drain â Source on Resistance
VGS = 10V, ID = 47.5A
24 mΩ
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1 3 3.9 V
IGSS Gate â Source Leakage Current
VGS = ±20 V, VDS = 0V
200 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 95A
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Min Typ Max Unit
14.4
nF
17
300
68
nC
102
21
30
ns
100
45
1350
µJ
1040
2200
µJ
1270
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
VSD
dv/dt
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 95A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 95A
VR = 350V
diS/dt = 200A/µs
Tj = 25°C
Tj = 25°C
Min Typ Max Unit
95
A
70
1.2 V
4 V/ns
600
ns
34
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ⤠- 95A di/dt ⤠200A/µs VR ⤠VDSS Tj ⤠150°C
www.microsemi.com
2â6
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