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| APTC60SKM24CT1G Datasheet, PDF (2/7 Pages) Microsemi Corporation – Buck chopper Super Junction MOSFET SiC chopper diode | |||
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APTC60SKM24CT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
350 µA
600
RDS(on) Drain â Source on Resistance
VGS = 10V, ID = 47.5A
24 mΩ
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1 3 3.9 V
IGSS Gate â Source Leakage Current
VGS = ±20 V, VDS = 0V
200 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 95A
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Min Typ Max Unit
14.4
nF
17
300
68
nC
102
21
30
ns
100
45
810
µJ
1040
1320
µJ
1270
CR2 SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
600
V
Tj = 25°C
Tj = 175°C
200 800
µA
400 4000
IF DC Forward Current
VF Diode Forward Voltage
IF = 40A
Tc = 100°C
Tj = 25°C
Tj = 175°C
40
A
1.6 1.8 V
2.0 2.4
QC Total Capacitive Charge
IF = 40A, VR = 300V
di/dt =1200A/µs
56
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
260
pF
200
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