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| APTC60HM70T1G Datasheet, PDF (2/6 Pages) Microsemi Corporation – Full - Bridge Super Junction MOSFET Power Module | |||
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APTC60HM70T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
25
µA
250
VGS = 10V, ID = 39A
70 mâ¦
VGS = VDS, ID = 2.7mA
VGS = ±20 V, VDS = 0V
2.1 3 3.9 V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 39A
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5â¦
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5â¦
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5â¦
Min Typ Max Unit
7
2.56
nF
0.21
259
29
nC
111
21
30
ns
283
84
670
µJ
980
1096
µJ
1206
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
VSD
dv/dt
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 39A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 39A
VR = 350V
diS/dt = 100A/µs
Tj = 25°C
Tj = 25°C
Min Typ Max Unit
39
A
29
1.2 V
6 V/ns
580
ns
23
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ⤠- 39A di/dt ⤠100A/µs VR ⤠VDSS Tj ⤠150°C
www.microsemi.com
2â6
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