 English |
|
|
|
|
|
|
|
| APTC60DSKM24T3G Datasheet, PDF (2/7 Pages) Microsemi Corporation – Dual buck chopper Super Junction MOSFET Power Module | |||
| |||
| ◁ |
APTC60DSKM24T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
350 µA
600
RDS(on) Drain â Source on Resistance
VGS = 10V, ID = 47.5A
24 mΩ
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1 3 3.9 V
IGSS Gate â Source Leakage Current
VGS = ±20 V, VDS = 0V
200 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 95A
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Min Typ Max Unit
14.4
nF
17
300
68
nC
102
21
30
ns
100
45
1350
µJ
1040
2200
µJ
1270
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=600V
IF = 100A
IF = 200A
IF = 100A
600
V
Tj = 25°C
Tj = 125°C
100 µA
500
Tc = 80°C
100
A
1.6 2
2
V
Tj = 125°C
1.3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
160
IF = 100A
VR = 400V
Tj = 125°C
220
ns
di/dt=200A/µs Tj = 25°C
290
nC
Tj = 125°C
1530
www.microsemi.com
2â7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese