APT97N65B2C6 Datasheet, PDF (2/5 Pages) Microsemi Corporation – Super Junction MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
C_iss Input Capacitance
C_oss Output Capacitance
C_{rss Reverse Transfer Capacitance}
Q_{g Total Gate Charge} ⁵
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller ") Charge}
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 325V
I_D = 97A @ 25°C
t_d(on) Turn-on Delay Time
t_r
Rise Time
t_{d(off) Turn-off Delay Time}
t_f
Fall Time
E_{on Turn-on Switching Energy} ⁶
E_{off Turn-off Switching Energy}
E_on Turn-on Switching Energy ⁶
E_{off Turn-off Switching Energy}
INDUCTIVE SWITCHING
V_GS = 15V
V_DD = 433V
I_D = 97A @ 25°C
R_G = 2.2Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 433V, V_GS = 15V
I_D = 97A, R_G = 2.2Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 433V, V_GS = 15V
I_D =97A, R_G = 2.2Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
I_S
Continuous Source Current (Body Diode)
I_SM Pulsed Source Current ² (Body Diode)
V_SD Diode Forward Voltage ⁴ (V_GS = 0V, I_S = -48.5A)
/dv
dt
Peak
Diode
Recovery
/dv
dt
7
t _rr
Reverse Recovery Time
(I_S
=
-97A,
/di
dt
=
100A/μs)
Q _rr
Reverse Recovery Charge
(I_S
=
-97A,
/di
dt
=
100A/μs)
I_RRM
Peak Recovery Current
(I_S
=
-97A,
/di
dt
=
100A/μs)
T_{j = 25°C}
T_{j = 25°C}
T_{j = 25°C}
APT97N65B2_LC6
TYP MAX UNIT
7650
5045
pF
550
300
50
nC
160
25
60
ns
275
130
2860
3500
4030
μJ
3695
TYP MAX UNIT
97
Amps
291
0.9
1.2 Volts
50
V/ns
790
ns
19
μC
43
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN TYP MAX
R_θJC
Junction to Case
0.145
R_θJA
Junction to Ambient
40
1 Continuous current limited by package lead temperature.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
2 Repetitive Rating: Pulse width limited by maximum junction temperature
5 See MIL-STD-750 Method 3471
3 Repetitive avalanche causes additional power losses that can be calculated as _{6 Eon includes diode reverse recovery.}
PAV = EAR*f . Pulse width tp limited by Tj max.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
D = 0.9
0.12
0.10
0.08
0.06
0.04
0.02
0
10^-5
0.7
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
0.1
1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
UNIT
°C/W