APT94N65B2C3_11 Datasheet, PDF (2/5 Pages) Microsemi Corporation – Super Junction MOSFET

DYNAMIC CHARACTERISTICS
APT94N65B2C3(G)
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ⁴
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁵
Turn-off Switching Energy
Turn-on Switching Energy ⁵
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 300V
I_D = 94A @ 25°C
INDUCTIVE SWITCHING
V_GS = 15V
V_DD = 400V
I_D = 94A @ 25°C
R_G = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 94A, R_G = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V, V_GS = 15V
I_D = 94A, R_G = 4.3Ω
MIN
TYP
13940
5200
229
580
72
234
32
59
498
167
2684
4448
3391
5082
MAX
UNIT
pF
nC
ns
μJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM Pulsed Source Current ² (Body Diode)
V_SD Diode Forward Voltage ⁴ (V_GS = 0V, I_S = -94A)
t _rr
Reverse Recovery Time
(I_S
=
-94A,
/di
dt
=
100A/μs)
Q _rr
Reverse Recovery Charge
(I_S
=
-94A,
/di
dt
=
100A/μs)
I_RRM
Peak Recovery Current
(I_S
=
-94A,
/di
dt
=
100A/μs)
T_{j = 25°C}
T_{j = 25°C}
T_{j = 25°C}
94
Amps
282
0.9
1.2 Volts
960
ns
1271
31
μC
43
58
Amps
56
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.15
31 ^°C/W
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 Repetitive avalanche causes additional power losses that can be calcula-
ted as P_AV = E_AR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
D = 0.9
0.12
0.10
0.08
0.06
0.04
0.02
0
10^-5
0.7
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration