APT8DQ60K Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/µs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 8A, di_F/dt = -200A/µs
-
V_R = 400V, T_C = 25°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 8A, di_F/dt = -200A/µs
-
V_R = 400V, T_C = 125°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 8A, di_F/dt = -1000A/µs
-
V_R = 400V, T_C = 125°C
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
R_θJC Junction-to-Case Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT8DQ60K_SA(G)
TYP MAX UNIT
14
ns
19
17
nC
2
-
Amps
90
ns
160
nC
3
-
Amps
43
ns
250
nC
11
Amps
TYP
0.07
1.9
MAX
2.7
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
3.0
2.5
D = 0.9
2.0
0.7
1.5
0.5
Note:
1.0
0.3
t1
t2
0.5
0.1
SINGLE PULSE
Duty Factor D = ^t1/t2
0.05
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
1.93
0.00078
0.773
0.0246
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL