APT8024B2FLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 400V
I_D = 31A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 400V
I_D = 31A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 533V, V_GS = 15V
I_D = 31A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 533V V_GS = 15V
I_D = 31A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -31A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
Reverse Recovery Time
t_rr
(I_S = -31A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
Reverse Recovery Charge
Q_rr
(I_S = -I_D 31A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
I_RRM
Peak Recovery Current
(I_S = -31A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
MIN
MIN
MIN
APT8024B2_LFLL
TYP MAX UNIT
4670
860
pF
155
160
24
nC
105
9
5
ns
23
4
645
525
µJ
1040
625
TYP MAX UNIT
31 _Amps
124
1.3 Volts
18 V/ns
300
ns
600
2.0
µC
6.7
13
Amps
22
TYP MAX UNIT
0.22
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 2.00mH, R_G = 25Ω, Peak I_L = 31A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D31A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
D = 0.9
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION