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APT58M50JU2 Datasheet, PDF (2/5 Pages) Microsemi Corporation – ISOTOP® Boost chopper ISOTOP® Boost chopper
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APT58M50JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
Min Typ Max Unit
VDS = 500V
Tj = 25°C
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 42A
250 µA
1000
65 mΩ
VGS = VDS, ID = 2.5mA
VGS = ±30 V
34 5V
±100 nA
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 42A
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
Min Typ Max Unit
10800
1164
pF
148
340
75
nC
155
60
70
ns
155
50
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=600V
IF = 30A
IF = 60A
IF = 30A
600
V
Tj = 25°C
Tj = 125°C
25
500
µA
Tc = 90°C
30
A
1.8 2.2
2.2
V
Tj = 125°C
1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
25
IF = 30A
VR = 400V
Tj = 125°C
160
ns
di/dt =200A/µs Tj = 25°C
35
nC
Tj = 125°C
480
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
Mosfet
Diode
RthJA
VISOL
TJ,TSTG
TL
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Wt Package Weight
Min Typ
2500
-40
29.2
Max Unit
0.23
1.05 °C/W
20
V
150
300
°C
1.5 N.m
g
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