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| APT58M50JCU3 Datasheet, PDF (2/5 Pages) Microsemi Corporation – ISOTOP Buck chopper MOSFET + SiC chopper diode Power module | |||
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APT58M50JCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
Min Typ Max Unit
VDS = 500V
Tj = 25°C
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 42A
250 µA
1000
65 mΩ
VGS = VDS, ID = 2.5mA
VGS = ±30 V
34 5V
±100 nA
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 42A
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
Min Typ Max Unit
10800
1164
pF
148
340
75
nC
155
60
70
ns
155
50
SiC chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
600
V
Tj = 25°C
Tj = 175°C
100 400 µA
200 2000
IF DC Forward Current
VF Diode Forward Voltage
IF = 20A
Tc = 100°C
Tj = 25°C
Tj = 175°C
20
A
1.6 1.8 V
2 2.4
QC Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
130
pF
100
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC Junction to Case Thermal Resistance
Mosfet
SiC Diode
0.23
1.35 °C/W
RthJA
VISOL
TJ,TSTG
TL
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063â from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
2500
-40
20
V
150
300
°C
1.5 N.m
Wt Package Weight
29.2
g
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