APT54GA60B Datasheet, PDF (2/6 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT54GA60B_S
Symbol Parameter
Test Conditions
Min Typ Max Unit
C_ies
C_oes
C_res
Q_g3
Q_ge
Q_gc
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on2
E⁶
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Capacitance
4130
V_GE = 0V, V_CE = 25V
f = 1MHz
350
pF
45
Gate Charge
158
V_GE = 15V
V_CE= 300V
I_C = 32A
26
nC
52
T_J = 150°C, R_G = 4.7Ω⁴, V_GE = 15V,
161
A
L= 100uH, V_CE = 600V
Inductive Switching (25°C)
17
V_CC = 400V
V_GE = 15V
I_C = 32A
R_G = 4.7Ω⁴
T_J = +25°C
20
ns
112
86
534
μJ
466
t_d(on
Turn-On Delay Time
Inductive Switching (125°C)
16
t_r
Current Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Current Fall Time
E_on2
Turn-On Switching Energy
E6
off
Turn-Off Switching Energy
V_CC = 400V
V_GE = 15V
I_C = 32A
R_G = 4.7Ω⁴
T_J = +125°C
21
ns
146
145
891
μJ
838
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471
4 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E_on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.