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| APT50N60JCU2 Datasheet, PDF (2/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper Super Junction MOSFET Power Module | |||
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APT50N60JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
250 µA
500
VGS = 10V, ID = 22.5A
40 45 mΩ
VGS = VDS, ID = 3mA
2.1 3 3.9 V
VGS = ±20 V, VDS = 0V
100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 49A
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
VGS = 0V, IS = - 49A
IS = - 49A
VR = 400V
diS/dt = 100A/µs
Tj = 25°C
Tj = 25°C
Min Typ Max Unit
7.2
nF
8.5
150
34
nC
51
21
30
ns
100
45
675
µJ
520
1100
µJ
635
0.9 1.2 V
600
ns
17
µC
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2-6
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