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APT50N60JCCU2 Datasheet, PDF (2/3 Pages) Microsemi Corporation – ISOTOP® Boost chopper Super Junction MOSFET Power Module
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APT50N60JCCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C
VGS = 0V,VDS = 600V Tj = 125°C
250 µA
500
VGS = 10V, ID = 22.5A
40 45 mΩ
VGS = VDS, ID = 3mA
2.1 3 3.9 V
VGS = ±20 V, VDS = 0V
100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 44A
Tj=25°C
VGS = 10V
VBus = 400V
ID = 44A
RG = 3.3Ω
Tj=25°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
Tj=125°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω
VGS = 0V, IS = - 44A
IS = - 44A
VR = 400V
diS/dt = 100A/µs
Tj = 25°C
Tj = 25°C
Min Typ Max Unit
6.8
nF
0.32
150
34
nC
51
30
20
ns
100
20
405
µJ
520
660
µJ
635
0.9 1.2 V
600
ns
17
µC
SiC chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
600
V
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 175°C
100 400 µA
200 2000
IF(AV) Maximum Average Forward Current
50% duty cycle Tc = 125°C
20
A
VF Diode Forward Voltage
IF = 20A
Tj = 25°C
Tj = 175°C
1.6 1.8 V
2 2.4
QC Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
nC
Q Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
130
pF
100
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