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| APT50M50L2LL_04 Datasheet, PDF (2/5 Pages) Microsemi Corporation – POWER MOS 7 R MOSFET | |||
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DYNAMIC CHARACTERISTICS
APT50M50L2LL
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 89A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 89A @ 25°C
RG = 0.6â¦
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 89A, RG = 3â¦
INDUCTIVE SWITCHING @ 125°C
VDD = 333V, VGS = 15V
ID = 89A, RG = 3â¦
MIN TYP MAX UNIT
10550
2060
pF
105
200
50
nC
105
24
22
ns
56
8
1490
1650
µJ
2105
1835
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -89A)
t rr
Reverse Recovery Time (IS = -89A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -89A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
680
17.0
89
Amps
356
1.3 Volts
ns
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.14
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.81mH, RG = 25â¦, Peak IL = 89A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ⤠-89A di/dt ⤠700A/µs VR ⤠500V TJ ⤠150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
0.9
0.12
0.10
0.7
0.08
0.06
0.04
0.02
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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