APT50DL60B Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrasoft Recovery Rectifi er Diode

DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -100A/μs, V_R = 30V, T_J = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 50A, di_F/dt = -200A/μs
V_R = 400V, T_C = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 50A, di_F/dt = -200A/μs
V_R = 400V, T_C = 125°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 50A, di_F/dt = -1000A/μs
V_R = 400V, T_C = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
R_θJC
Junction-to-Case Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT50DL60B_S(G)
Typ Max Unit
52
399
1498
9
449
3734
15
284
5134
34
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Typ Max Unit
0.63 °C/W
0.22
oz
5.9
g
10
lb·in
1.1
N·m
0.7
0.6
0.5
0.4
0.3
Note:
0.2
0.1
0
10^-5
10^-4
10^-3
10^-2
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
0.316
0.312
0.00467
0.1483
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL