APT5010LLLG Datasheet, PDF (2/5 Pages) Microsemi Corporation – Power MOS 7 is a new generation of low loss, high voltage, N-Channel

DYNAMIC CHARACTERISTICS
APT5010B2LL_LLL(G)
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 250V
I_D = 46A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 250V
I_D = 46A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 333V, V_GS = 15V
I_D = 46A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 333V, V_GS = 15V
I_D = 46A, R_G = 5Ω
MIN
TYP
4360
895
60
95
24
50
11
15
25
3
545
510
845
595
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -46A)
t _rr
Reverse Recovery Time (I_S = -46A, dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -46A, dl_S/dt = 100A/µs)
dv_{/dt Peak Diode Recovery} dv_/dt 5
608
11.0
46
Amps
184
1.3 ^Volts
ns
µC
8
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.25
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 1.51mH, R_G = 25Ω, Peak I_L = 46A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D46A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
0.3
0.1
0.05
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION