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| APT5010JLLU2 Datasheet, PDF (2/7 Pages) Advanced Power Technology – ISOTOP Boost chopper MOSFET Power Module | |||
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APT5010JLLU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
RDS(on) Drain â Source on Resistance
VGS = 10V, ID = 23A
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
IGSS Gate â Source Leakage Current
VGS = ±20 V, VDS = 0V
100 µA
500
100 mâ¦
5V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 41A @ TJ=25°C
Resistive switching @ 25°C
VGS = 15V
VBus = 250V
ID = 41A @ TJ=25°C
RG = 0.6â¦
Inductive Switching @ 25°C
Vbus = 330V, VGS=15V
ID=46A, RG=5â¦
Inductive Switching @ 125°C
Vbus = 330V, VGS=15V
ID=46A, RG=5â¦
Min Typ Max Unit
4360
894
pF
60
96
24
nC
49
11
15
ns
25
3
543
µJ
509
843
µJ
593
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Tj = 125°C
IRM Maximum Reverse Leakage Current
VR = 600V
VR = 600V
Tj = 25°C
Tj = 125°C
CT Junction Capacitance
VR = 200V
Reverse Recovery Time
trr
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/µs
Tj = 25°C
Tj = 25°C
Tj = 125°C
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Qrr Reverse Recovery Charge
Tj = 25°C
Tj = 125°C
1.6 1.8
1.9
V
1.4
250
500
µA
44
pF
23
85
ns
160
4
A
8
130
nC
700
trr Reverse Recovery Time
IF = 30A
70
ns
Qrr Reverse Recovery Charge
VR = 400V
Tj = 125°C
1300
nC
IRRM Maximum Reverse Recovery Current di/dt =1000A/µs
30
A
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