APT37M100B2 Datasheet, PDF (2/4 Pages) Microsemi Corporation – N-Channel MOSFET

Static Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
V_BR(DSS)
Drain-Source Breakdown Voltage
V_GS = 0V, I_D = 250µA
1000
∆V_BR(DSS)/∆T_{J Breakdown Voltage Temperature Coefficient}
R_DS(on)
Drain-Source On Resistance ³
Reference to 25°C, I_D = 250µA
V_GS = 10V, I_D = 18A
V_GS(th)
∆V_GS(th)/∆T_J
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
V_GS = V_DS, I_D = 2.5mA
3
I_DSS
Zero Gate Voltage Drain Current
V_DS = 1000V
V_GS = 0V
T_J = 25°C
T_J = 125°C
I_GSS
Gate-Source Leakage Current
V_GS = ±30V
APT37M100B2_L
Typ Max Unit
V
1.15
V/°C
0.29 0.33
Ω
4
5
V
-10
mV/°C
100
µA
500
±100 nA
Dynamic Characteristics
Symbol
g_fs
C_iss
C_rss
C_oss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
T_J = 25°C unless otherwise specified
Test Conditions
Min
V_DS = 50V, I_D = 18A
V_GS = 0V, V_DS = 25V
f = 1MHz
C_o(cr) ⁴
C_o(er) ⁵
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
V_GS = 0V, V_DS = 0V to 667V
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V_GS = 0 to 10V, I_D = 18A,
V_DS = 500V
Resistive Switching
V_DD = 667V, I_D = 18A
R_G = 2.2Ω ⁶ , V_GG = 15V
Typ
39
9835
130
825
335
170
305
55
145
44
40
150
38
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) ¹
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
I_SD = 18A, T_J = 25°C, V_GS = 0V
I_SD = 18A ³
di_SD/dt = 100A/µs, T_J = 25°C
I_SD ≤ 18A, di/dt ≤1000A/µs, V_DD = 100V,
T_J = 125°C
Min
Typ Max
37
140
1
1165
33
10
Unit
A
V
ns
µC
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 13.36mH, R_G = 2.2Ω, I_AS = 18A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_OSS with V_DS = 67% of V_(BR)DSS.
5 C_o(er) is defined as a fixed capacitance with the same stored energy as C_OSS with V_DS = 67% of V_(BR)DSS. To calculate C_o(er) for any value of
V_DS less than V_(BR)DSS, use this equation: C_o(er) = -2.85E-7/V_DS^2 + 5.04E-8/V_DS + 9.75E-11.
6 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.