APT36N90BC3G_10 Datasheet, PDF (2/5 Pages) Microsemi Corporation – Super Junction MOSFET

APT36N90BC3G
Symbol Characteristic
Test Conditions
C_iss
Input Capacitance
C_{oss Output Capacitance}
C_{rss Reverse Transfer Capacitance}
V_GS = 0V
V_DS = 25V
f = 1 MHz
Q_g
Total Gate Charge ⁴
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain ("Miller ") Charge
V_GS = 10V
V_DD = 450V
I_D = 36A @ 25°C
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁵
Turn-off Switching Energy
Turn-on Switching Energy ⁵
Turn-off Switching Energy
INDUCTIVE SWITCHING
V_GS = 15V
V_DD = 600V
I_D = 36A @ 25°C
R_G = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 600V, V_GS = 15V
I_D = 36A, R_G = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 600V, V_GS = 15V
I_D = 36A, R_G = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
I_SM
V_SD
dv_/dt
t _rr
Q _rr
I_RRM
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ³ (V_GS = 0V, I_S = 18A)
Peak Diode Recovery ^dv/_dt ⁶
Reverse Recovery Time
(I_S = -36A, ^di/_dt = 100A/μs)
Reverse Recovery Charge
(I_S = -36A, ^di/_dt = 100A/μs)
Peak Recovery Current
(I_S = -36A, ^di/_dt = 100A/μs)
THERMAL CHARACTERISTICS
T_{j = 25°C}
T_{j = 125°C}
T_{j = 25°C}
T_{j = 125°C}
T_{j = 25°C}
T_{j = 125°C}
Symbol Characteristic
MIN
MIN
MIN
TYP
7463
6827
167
252
38
112
70
20
400
25
1500
750
2130
867
MAX
UNIT
pF
nC
ns
μJ
TYP
36
96
0.8
930
1230
35
44
70
68
MAX
1.2
10
UNIT
Amps
Volts
V/ns
ns
μC
Amps
TYP MAX UNIT
R_θJC Junction to Case
0.3
R_θJA Junction to Ambient
31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as P_AV = E_AR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
°C/W
0.35
0.30
D = 0.9
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
0.1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration