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| APT33N90JCU2 Datasheet, PDF (2/5 Pages) Microsemi Corporation – ISOTOP Boost chopper Super Junction MOSFET Power Module | |||
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APT33N90JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
VGS = 0V,VDS = 900V Tj = 25°C
VGS = 0V,VDS = 900V Tj = 125°C
100 µA
500
VGS = 10V, ID = 26A
100 120 mΩ
VGS = VDS, ID = 3mA
2.5 3 3.5 V
VGS = ±20 V, VDS = 0V
100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
VGS = 10V
VBus = 400V
ID = 26A
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Min Typ Max Unit
6.8
nF
0.33
270
32
nC
115
70
20
ns
400
25
1.5
mJ
0.75
2.1
mJ
0.85
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
IF = 30A
1200
V
Tj = 25°C
Tj = 125°C
100 µA
500
Tc = 80°C
30
A
2.6 3.1
3.2
V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
300
IF = 30A
VR = 800V
Tj = 125°C
380
ns
di/dt=200A/µs Tj = 25°C
360
nC
Tj = 125°C
1700
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