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| APT33N90JCCU2 Datasheet, PDF (2/5 Pages) Microsemi Corporation – ISOTOP® Boost chopper Super Junction MOSFET SiC chopper diode | |||
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APT33N90JCCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
VGS = 0V,VDS = 900V Tj = 25°C
VGS = 0V,VDS = 900V Tj = 125°C
100 µA
500
VGS = 10V, ID = 26A
100 120 mΩ
VGS = VDS, ID = 3mA
2.5 3 3.5 V
VGS = ±20 V, VDS = 0V
100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
VGS = 10V
VBus = 400V
ID = 26A
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Min Typ Max Unit
6.8
nF
0.33
270
32
nC
115
70
20
ns
400
25
0.9
mJ
0.75
1.3
mJ
0.85
SiC chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
1200
V
Tj = 25°C
Tj = 175°C
32 200 µA
56 1000
IF DC Forward Current
VF Diode Forward Voltage
IF = 10A
Tc = 100°C
Tj = 25°C
Tj = 175°C
10
A
1.6 1.8 V
2.3 3
QC Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
40
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
96
pF
69
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