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| APT30GS60BRDQ2 Datasheet, PDF (2/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode | |||
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Static Characteristics
TJ = 25°C unless otherwise speciï¬ed
Symbol Parameter
Test Conditions
VBR(CES) Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
âVBR(CES)/âTJ Breakdown Voltage Temperature Coeff
VCE(ON) Collector-Emitter On Voltage 4
VEC
Diode Forward Voltage 4
VGE(th)
Gate-Emitter Threshold Voltage
âVGE(th)/âTJ Threshold Voltage Temp Coeff
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Reference to 25°C, IC = 250µA
VGE = 15V
IC = 30A
TJ = 25°C
TJ = 125°C
IC = 30A
TJ = 25°C
TJ = 125°C
VGE = VCE, IC = 1mA
VCE = 600V,
VGE = 0V
TJ = 25°C
TJ = 125°C
VGE = ±20V
APT30GS60B_SRDQ2(G)
Min Typ Max Unit
600
-
-
V
-
0.60
-
V/°C
-
2.8 3.15
-
3.25
-
-
1.85
-
V
-
1.5
-
3
4
5
-
6.7
-
mV/°C
-
-
50
µA
-
-
1000
-
-
±100 nA
Dynamic Characteristics
TJ = 25°C unless otherwise speciï¬ed
Symbol Parameter
Test Conditions
gfs
Cies
Coes
Cres
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 50V, IC = 30A
VGE = 0V, VCE = 25V
f = 1MHz
Co(cr)
Co(er)
Reverse Transfer Capacitance
Charge Related 5
Reverse Transfer Capacitance
Current Related 6
VGE = 0V
VCE = 0 to 400V
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Ggc
Gate-Collector Charge
VGE = 0 to 15V
IC = 30A, VCE = 300V
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy 8
Turn-On Switching Energy 9
Turn-Off Switching Energy 10
Inductive Switching IGBT and
Diode:
TJ = 25°C, VCC = 400V,
RG
=
IC
9.1â¦
= 30A
7, VGG
=
15V
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Inductive Switching IGBT and
Diode:
tf
Eon1
Eon2
Eoff
Fall Time
Turn-On Switching Energy 8
Turn-On Switching Energy 9
Turn-Off Switching Energy 10
TJ = 125°C, VCC = 400V,
RG
=
IC
9.1â¦
= 30A
7, VGG
=
15V
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
IF = 40A
VR = 400V
diF/dt = 200A/µs
Min Typ Max
-
18
-
-
1600
-
-
140
-
-
90
-
-
130
-
95
-
145
-
-
12
-
-
65
-
-
16
-
-
29
-
-
360
-
-
27
-
-
TBD
-
-
800
-
-
570
-
-
16
-
-
29
-
-
390
-
-
22
-
-
TBD
-
-
1185
-
-
695
-
-
25
-
-
35
-
-
3
-
Unit
S
pF
nC
ns
µJ
ns
µJ
ns
nC
A
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