APT30DQ60BHB Datasheet, PDF (2/4 Pages) Microsemi Corporation – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/μs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 30A, di_F/dt = -200A/μs
-
V_R = 400V, T_C = 25°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 30A, di_F/dt = -200A/μs
-
V_R = 400V, T_C = 125°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 30A, di_F/dt = -1000A/μs
-
V_R = 400V, T_C = 125°C
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
R_θJC Junction-to-Case Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30DQ60BHB(G)
TYP MAX UNIT
23
ns
30
55
nC
3
-
Amps
175
ns
485
nC
6
-
Amps
75
ns
855
nC
22
Amps
TYP
0.22
5.9
MAX
1.5
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10^-5
10^-4
10^-3
10^-2
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0.1
1
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
0.481
1.019
0.0023
0.0531
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL