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APT30DQ100B Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 667V, TC = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 667V, TC = 125°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -1000A/µs
-
VR = 667V, TC = 125°C
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
RθJC Junction-to-Case Thermal Resistance
WT
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30DQ100B_S(G)
TYP MAX UNIT
24
ns
295
440
nC
4
-
Amps
330
ns
1550
nC
8
-
Amps
150
ns
2250
nC
25
Amps
TYP
0.22
5.9
MAX
.80
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
0.9
0.8
D = 0.9
0.7
0.6
0.7
0.5
0.5
0.4
0.3
0.3
0.2
0.1
0.1
0.05
0
10-5
SINGLE PULSE
10-4
10-3
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION