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APT30DL60BCT Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrasoft Recovery Rectifi er Diode | |||
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DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
RθJC
Junction-to-Case Thermal Resistance
WT
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the speciï¬cations and information contained herein.
APT30DL60BCT(G)
Typ Max Unit
64
317
962
7
561
2244
9
264
3191
26
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Typ Max Unit
1.00 °C/W
0.22
oz
5.9
g
10
lb·in
1.1
N·m
1.2
1
0.8
0.6
Note:
0.4
t1
0.2
0
10-5
10-4
10-3
10-2
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
.562
TC (°C)
.316
.0019
.0828
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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