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APT2X31DQ60J Datasheet, PDF (2/4 Pages) Microsemi Corporation – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 400V, TC = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 400V, TC = 125°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -1000A/µs
-
VR = 400V, TC = 125°C
-
APT2x31_30DQ60J
TYP MAX UNIT
21
ns
25
35
nC
3
Amps
160
ns
480
nC
6
Amps
85
ns
920
nC
20
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MIN
2500
WT Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
1.21
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
1.40
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
Duty Factor D = t1/t2
0.05
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
0.320
0.00278
0.515
0.0421
TC (°C)
0.375
0.242
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL