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APT2X31DQ120J Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | |||
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 800V, TC = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -200A/µs
-
VR = 800V, TC = 125°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 30A, diF/dt = -1000A/µs
-
VR = 800V, TC = 125°C
-
APT2x31_30DQ120J
TYP MAX UNIT
25
ns
300
360
nC
4
-
Amps
380
ns
1700
nC
8
-
Amps
160
ns
2550
nC
28
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MIN
2500
WT Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the speciï¬cations and information contained herein.
TYP
1.03
29.2
MAX
1.1
10
1.1
UNIT
°C/W
Volts
oz
g
lbâ¢in
Nâ¢m
1.20
1.00
D = 0.9
0.80
0.7
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
SINGLE PULSE
Duty Factor D = t1/t2
0.05
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
0.219
0.00306
0.468
0.0463
TC (°C)
0.341
0.267
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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