APT2X151DL60J Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrafast Soft Recovery Dual Rectifi er Diode

DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -15A/μs, V_R = 30V, T_J = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -200A/μs
V_R = 400V, T_C = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -200A/μs
V_R = 400V, T_C = 125°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -1000A/
μs V_R = 400V, T_C = 125°C
APT2X151_150DL60J
Typ Max Unit
51
408
2387
13
639
7253
21
299
12075
68
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_θJC
V_Isolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_T
Package Weight
Min
2500
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.6
Typ
1.03
29.2
Max
0.56
Unit
°C/W
oz
g
10
lb·in
1.1
N·m
0.5
0.4
0.3
Note:
0.2
t1
0.1
0
10^-5
10^-4
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION