APT2X101DQ60J Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

DYNAMIC CHARACTERISTICS
APT2x101_100DQ60J
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/µs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
34
ns
t_rr
Reverse Recovery Time
-
160
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 100A, di_F/dt = -200A/µs
-
290
nC
V_R = 400V, T_C = 25°C
-
5
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
220
ns
I_F = 100A, di_F/dt = -200A/µs
-
1530
nC
V_R = 400V, T_C = 125°C
-
13
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
100
I_F = 100A, di_F/dt = -1000A/µs
-
2890
V_R = 400V, T_C = 125°C
-
44
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_θJC
V_Isolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MIN
2500
W_T Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
.42
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
0.45
0.40
0.9
0.35
0.7
0.30
0.25
0.5
0.20
Note:
0.15
0.3
t1
0.10
0.05
0.1
0.05
SINGLE PULSE
0
10^-5
10^-4
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION