APT2X101DQ100J Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/µs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 100A, di_F/dt = -200A/µs
-
V_R = 667V, T_C = 25°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 100A, di_F/dt = -200A/µs
-
V_R = 667V, T_C = 125°C
-
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 100A, di_F/dt = -1000A/µs
-
V_R = 667V, T_C = 125°C
-
APT2x101_100DQ100J
TYP MAX UNIT
45
ns
290
685
nC
6
-
Amps
340
ns
3645
nC
18
-
Amps
160
ns
7085
nC
70
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_θJC
V_Isolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MIN
2500
W_T Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
.32
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.3
0.10
t1
t2
0.05
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
0.0308
0.0693
0.219
0.00101
0.0299
0.390
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL