APT2X101DL40J Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrafast Soft Recovery Dual Rectifi er Diode

DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -100A/μs, V_R = 30V, T_J = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 100A, di_F/dt = -200A/μs
V_R = 268V, T_C = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 100A, di_F/dt = -200A/μs
V_R = 268V, T_C = 125°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 100A, di_F/dt = -1000A/
μs V_R = 268V, T_C = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
R_θJC
R_θJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT2X101DL40J
Typ Max Unit
40
120
830
13
240
3500
25
160
6600
76
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Typ Max Unit
0.42
°C/W
20
1.03
oz
29.2
g
10
lb·in
1.1
N·m
0.45
0.40
0.35
0.30
0.25
0.20
0.15
Note:
t1
0.1
0.05
0
10^-5
10^-4
10^-3
10^-2
10^-1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
1
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION