APT20F50B Datasheet, PDF (2/4 Pages) Microsemi Corporation – N-Channel FREDFET

Static Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min Typ
V_BR(DSS)
∆V_BR(DSS)/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance ³
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 250µA
V_GS = 10V, I_D = 10A
V_GS = V_DS, I_D = 0.5mA
500

0.60

0.25
2.5
4

-10
I_DSS
Zero Gate Voltage Drain Current
V_DS = 500V
V_GS = 0V
T_J = 25°C
T_J = 125°C


I_GSS
Gate-Source Leakage Current
V_GS = ±30V

AP20F50B_S
Max Unit
V
V/°C
0.30
Ω
5
V
mV/°C
100
µA
500
±100 nA
Dynamic Characteristics
Symbol
g_fs
C_iss
C_rss
C_oss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
T_J = 25°C unless otherwise specified
Test Conditions
Min
V_DS = 50V, I_D = 10A
V_GS = 0V, V_DS = 25V
f = 1MHz



C_o(cr) ⁴
C_o(er) ⁵
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
V_GS = 0V, V_DS = 0V to 333V


Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V_GS = 0 to 10V, I_D = 10A,
V_DS = 250V
Resistive Switching
V_DD = 333V, I_D = 10A
R_G = 10Ω ⁶ , V_GG = 15V







Typ
14
2950
40
320
185
95
75
17
34
13
15
34
11
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
I_S
I_SM
V_SD
t_rr
Q_rr
I_rrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ¹
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D

G
S
I_SD = 10, T_J = 25°C, V_GS = 0V

T_J = 25°C

175
I_SD = 10A ³
T_J = 125°C
T_J = 25°C


310
0.62
di_SD/dt = 100A/µs
T_J = 125°C

1.47
V_DD = 100V
T_J = 25°C

6.6
T_J = 125°C

8.9
I_SD ≤ 10A, di/dt ≤1000A/µs, V_DD = 333V,
T_J = 125°C

20
60
1.0
200
370
20
A
V
ns
µC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 8.10mH, R_G = 25Ω, I_AS = 10A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_OSS with V_DS = 67% of V_(BR)DSS.
5 C_o(er) is defined as a fixed capacitance with the same stored energy as C_OSS with V_DS = 67% of V_(BR)DSS. To calculate C_o(er) for any value of
V_DS less than V_(BR)DSS, use this equation: C_o(er) = -1.05E-7/V_DS^2 + 2.44E-8/V_DS + 6.99E-11.
6 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.