APT15S20KCT Datasheet, PDF (2/4 Pages) Advanced Power Technology – HIGH VOLTAGE SCHOTTKY DIODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
I_F = 15A, di_F/dt = -200A/μs
V_R = 133V, T_C = 25°C
-
-
-
I_F = 15A, di_F/dt = -200A/μs
V_R = 133V, T_C = 125°C
-
-
-
I_F = 15A, di_F/dt = -700A/μs
V_R = 133V, T_C = 125°C
-
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
R_θJC
R_θJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
W_T Package Weight
Torque Maximum Mounting Torque
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
1.2
1.0
0.9
TYP MAX UNIT
80
ns
210
nC
5
-
Amps
100
ns
440
nC
8
-
Amps
55
ns
580
nC
18
Amps
TYP
0.07
1.9
MAX
1.1
80
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
0.8
0.7
0.6
0.5
Note:
0.4
0.3
t1
0.2
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction
temp (°C)
Power
(watts)
Case temperature (°C)
RC MODEL
0.241 °C/W
0.000249 J/°C
0.858 °C/W
0.000678 J/°C
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL