APT15GP60BDL Datasheet, PDF (2/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

DYNAMIC CHARACTERISTICS
APT15GP60BDL(G)
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_ies
Input Capacitance
Capacitance
C_oes Output Capacitance
V_GE = 0V, V_CE = 25V
C_res ^{Reverse Transfer Capacitance}
f = 1 MHz
V_GEP ^{Gate-to-Emitter Plateau Voltage}
Gate Charge
Q_g
Total Gate Charge ³
Q_ge
Gate-Emitter Charge
Q_gc
Gate-Collector ("Miller ") Charge
V_GE = 15V
V_CE = 300V
I_C = 15A
SSOA Switching Safe Operating Area
T_J = 150°C, R_G = 5Ω,V_GE =
65
15V, L = 100μH,V_CE = 600V
t_d(on) Turn-on Delay Time
Inductive Switching (25°C)
t_r
Current Rise Time
V_CC = 400V
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (With Diode) ⁵
Turn-off Switching Energy ⁶
V_GE = 15V
I_C = 15A
R_G = 5Ω
T_J = +25°C
t_d(on) ^{Turn-on Delay Time}
Inductive Switching (125°C)
t_r
Current Rise Time
V_CC = 400V
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (With Diode) ⁵⁵
Turn-off Switching Energy ⁶⁶
V_GE = 15V
I_C = 15A
R_G = 5Ω
T_J = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol _{Characteristic}
MIN
1685
210
15
7.5
55
12
15
8
12
29
58
130
152
121
8
12
69
88
130
267
268
TYP MAX
pF
V
nC
A
ns
μJ
ns
μJ
UNIT
R_θJC
R_θJC
W_T
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
.50
1.00
5.90
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E_on2 test circuit. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.