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APT15GF120JCU2 Datasheet, PDF (2/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode
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APT15GF120JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
250 µA
500
VGE =15V
IC = 15A
Tj = 25°C 2.5 3.2 3.7 V
Tj = 125°C
4.0
VGE = VCE, IC = 1mA
4
6V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1000
150
pF
70
VGE = 15V
VBus = 600V
IC =15A
99
10
nC
70
Inductive Switching (25°C)
60
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
50
315
ns
30
Inductive Switching (125°C)
60
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
50
ns
356
40
VGE = 15V
VBus = 600V
Tj = 125°C
1.2
IC = 15A
RG = 33Ω
Tj = 125°C
1
mJ
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
90
A
Chopper SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 175°C
32 200
µA
56 1000
IF DC Forward Current
Tc = 125°C
10
A
VF Diode Forward Voltage
IF = 10A
Tj = 25°C
Tj = 175°C
1.6 1.8 V
2.3 3
QC Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
40
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
96
pF
69
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