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APT15DQ100BCT Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE | |||
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -200A/µs
-
VR = 667V, TC = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -200A/µs
-
VR = 667V, TC = 125°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -1000A/µs
-
VR = 667V, TC = 125°C
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
RθJC Junction-to-Case Thermal Resistance
WT
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the speciï¬cations and information contained herein.
APT15DQ100BCT(G)
TYP MAX UNIT
20
ns
235
185
nC
3
-
Amps
300
ns
810
nC
6
-
Amps
125
ns
1150
nC
19
Amps
TYP
0.22
5.9
MAX
1.18
10
1.1
UNIT
°C/W
oz
g
lbâ¢in
Nâ¢m
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
0.676
0.504
0.00147
0.0440
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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