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APT15DQ100B Datasheet, PDF (2/4 Pages) Advanced Power Technology – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -200A/µs
-
VR = 667V, TC = 25°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -200A/µs
-
VR = 667V, TC = 125°C
-
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
IF = 15A, diF/dt = -1000A/µs
-
VR = 667V, TC = 125°C
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
RθJC Junction-to-Case Thermal Resistance
WT
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT15DQ100B(G)
TYP MAX UNIT
20
ns
235
185
nC
3
-
Amps
300
ns
810
nC
6
-
Amps
125
ns
1150
nC
19
Amps
TYP
0.22
5.9
MAX
1.18
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
0.676
0.504
0.00147
0.0440
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL