APT150DL60B2 Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrasoft Recovery Rectifi er Diode

DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -100A/μs, V_R = 30V, T_J = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -200A/μs
V_R = 400V, T_C = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -200A/μs
V_R = 400V, T_C = 125°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 150A, di_F/dt = -1000A/
μs V_R = 400V, T_C = 125°C
APT150DL60B2(G)
Typ Max Unit
51
408
2387
13
639
7253
21
299
12075
68
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min Typ Max Unit
R_θJC
W_T
Junction-to-Case Thermal Resistance
Package Weight
Torque Maximum Mounting Torque
0.26 °C/W
0.22
oz
5.9
g
10
lb·in
1.1
N·m
1 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.20
0.15
0.10
Note:
t1
0.05
0
10^-5
10^-4
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J (°C)
0.099
T_C (°C)
0.160
0.0160
0.380
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL