2N7373_1 Datasheet, PDF (2/3 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/613
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 0.05Adc, V_CE = 5.0Vdc
I_C = 2.5Adc, V_CE = 5.0Vdc
I_C = 5.0Adc, V_CE = 5.0Vdc
Base-Emitter Non-Saturated Voltage
V_CE = 5.0Vdc, I_C = 2.5Adc
Base-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 0.25Adc
I_C = 5.0Adc, I_B = 0.5Adc
Symbol
h_FE1
h_FE2
h_FE3
V_BE
V_BE(sat)1
V_BE(sat)2
Collector-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 0.25Adc
I_C = 5.0Adc, I_B = 0.5Adc
V_CE(sat)1
V_CE(sat)2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio
V_CE = 5Vdc, I_C = 100mAdc, f = 1kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 0.5Adc, V_CE = 5Vdc, f = 10MHz
Output Capacitance
V_CB = 10Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Symbol
h_fe
|h_fe|
C_obo
SAFE OPERATING AREA
DC Tests
T_C = +25°C, 1 Cycle, t = 1s
Test 1
V_CE = 12Vdc, I_C = 5.0Adc
Test 2
V_CE = 32Vdc, I_C = 1.5Adc
Test 3
V_CE = 80Vdc, I_C = 100mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
Min.
50
70
40
Min.
50
7.0
Max.
Unit
---
200
---
1.45
Vdc
1.45
Vdc
2.2
0.75
Vdc
1.5
Max.
Unit
250
pF
T4-LDS-0046 Rev. 3 (091477)
Page 2 of 3