2N6800 Datasheet, PDF (2/4 Pages) Seme LAB – N-CHANNEL POWER MOSFET

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TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
V_GS = 10V, I_D = 3.0A
V_DS = 200V
Symbol
Q_g(on)
Q_gs
Q_gd
I_D = 3.0A, V_GS = 10Vdc,
Gate drive impedance = 7.5Ω,
V_DD = 176Vdc
di/dt ≤ 100A/µs, V_DD ≤ 50V,
I_F = 3.0A
Symbol
t_d(on)
t_r
t_d(off)
t_f
t_rr
Min.
Min.
Max.
Unit
34.75
5.75
nC
16.59
Max.
Unit
30
35
ns
55
35
700
ns
T4-LDS-0148 Rev. 1 (092062)
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