2N6255 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCES
BVCEO
BVEBO
ICES
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE =0Vdc)
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCB = 15 Vdc, IE = 0)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
2N6255
Value
Min.
Typ.
Max.
Unit
36
-
-
Vdc
18
-
-
Vdc
4.0
-
Vdc
-
-
5.0
mA
-
-
.25
mA
5.0
-
-
-
DYNAMIC
Symbol
COB
Test Conditions
Output Capacitance
(VCB = 12.5Vdc, f = 1.0 MHz
Value
-
15
20
pF
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
GPE
Power Gain
ηC
Collector Efficiency
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc 7.8
-
-
dB
f = 175 MHz
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc 50
-
-
%
f = 175 MHz
MSC1306.PDF 10-25-99