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| 2N5415 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP high-voltage transistors | |||
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2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage
IC = 50 mAdc, VCE = 10 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
Turn-Off Time
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc
Test 4
2N5415
VCE = 300 Vdc, IC = 10 mAdc
2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Forward
Symbol
hFE
VCE(sat)
VBE
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max. Unit
30
120
15
2.0
Vdc
1.5
Vdc
3.0
15
25
15
pF
75
pF
1.0
µs
10
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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