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| 2N4261_1 Datasheet, PDF (2/5 Pages) Microsemi Corporation – PNP SMALL SIGNAL SILICON TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 1Vdc
IC = 10mAdc, VCE = 1Vdc
IC = 30mAdc, VCE = 1Vdc
Symbol
hFE
Collector-Emitter Saturation Voltage
IC = 1mAdc, IB = 0.1mAdc
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Saturation Voltage (Non-Saturated)
VCE = 1Vdc, IC = 1mAdc
VCE = 1Vdc, IC = 10mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of SmallâSignal Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz ⤠f ⤠1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ⤠f ⤠1.0MHz
VCE(sat)
VBE
Symbol
|hfe|
Cobo
Cibo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 17Vdc; IC = 10mAdc
Turn-Off Time
VCC = 17Vdc; IC = 10mAdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ⤠2.0%.
Symbol
ton
toff
Min.
25
30
20
0.6
Min.
20
Min.
Max.
Unit
150
0.15
Vdc
0.35
0.80
Vdc
1.0
Max.
Unit
2.5
pF
2.5
pF
Max.
Unit
2.5
ηs
3.5
ηs
T4-LDS-0150 Rev. 2 (101161)
Page 2 of 5
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