1N914-1 Datasheet, PDF (11/19 Pages) Microsemi Corporation – PERFORMANCE SPECIFICATION

MIL-PRF-19500/116L
4.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between
zero time and the point where the pulse has decreased to 110 percent of the steady-state value of V_F when
I_F = 50 mA dc. The maximum rise time of the response detector shall be 1 ns.
4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with
diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the
plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may
be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction
verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers’ normal
delidding procedures.
4.5.5 Thermal impedance (Z_6JX ^{measurements). Thermal impedance measurements shall be in accordance}
method 3101 MIL-STD-750, and as follows.
a. I_H = 300 mA to 500 mA.
b. t_H = 10 ms.
c. I_M = 1 mA to 10 mA.
d. t_MD = 70 2s maximum.
The maximum limit for Z_{6JX under these test conditions is Z6JX = 70GC/W.}
4.5.5.1 For initial qualification or requalification. Read and record data (Z_6JX) shall be supplied to the qualifying
activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be
serialized and provided to the qualifying activity for test correlation.
4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101
MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device
during test. The maximum limit for R_6JL under these test conditions shall be as shown in group B of 4.4.2.1 and
group E of table II. The following conditions shall apply when using method 3101:
a. I_H - - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA.
b. t_H - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum.
c. I_M - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA.
d. t_MD - - - - - - - - - - - - - - - - - - - - - - - - - - 70 2s maximum.
11