VRF3933 Datasheet, PDF (1/6 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET
The VRF3933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
VRF3933
VRF3933(MP)
100V, 300W, 150MHz
D
S
S
G
FEATURES
• Improved Ruggedness V_(BR)DSS = 250V
• 300W with 22dB Typ. Gain @ 30MHz, 100V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD3933

• Thermally Enhanced Package
• RoHS Compliant
Maximum Ratings
Symbol
V_DSS
I_D
V_GS
P_D
T_STG
T_J
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Device dissipation @ T_C = 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: T_C =25°C unless otherwise specified
VRF3933
Unit
250
V
20
A
±40
V
648
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
Parameter
V_(BR)DSS
V_DS(ON)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 100mA)
On State Drain Voltage (I_D(ON) = 10A, V_GS = 10V)
I_DSS
Zero Gate Voltage Drain Current (V_DS = 100V, V_GS = 0V)
I_GSS
Gate-Source Leakage Current (V_DS = ±20V, V_DS = 0V)
g_fs
Forward Transconductance (V_DS = 10V, I_D = 10A)
V_GS(TH)
Gate Threshold Voltage (V_DS = 10V, I_D = 100mA)
Min
Typ
Max Unit
250
260
V
2.7
4.0
2.0
mA
2.0
μA
8
12
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol
Characteristic
R_θJC
Junction to Case Thermal Resistance
Min
Typ
Max
Unit
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com