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| VRF190E Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET | |||
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RF POWER VERTICAL MOSFET
The VRF190E is a thermally-enhanced version of the VRF190. It is a gold-
metallized silicon n-channel RF power transistor designed for broadband
commercial and military applications requiring high power and gain without
compromising reliability, ruggedness, or inter-modulation distortion.
VRF190E
100V, 150W, 150MHz
M174A
FEATURES
⢠Enhanced Package for 30% higher PD
⢠150W with 22dB Typical Gain @ 30MHz, 100V
⢠150W with 14dB Typical Gain @ 150MHz, 100V
⢠Excellent Stability & Low IMD
⢠RoHS Compliant
⢠5:1 Load VSWR Capability at Speciï¬ed Operating Conditions
⢠Nitride Passivated
⢠Refractory Gold Metallization
⢠Drop in Replacement for SD3931-10 with Higher BV
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC =25°C unless otherwise speciï¬ed
VRF190E
Unit
270
V
12
A
±40
V
390
W
-65 to 200
°C
200
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 5A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min
Typ
Max Unit
270
280
V
3.5
5.0
1.0
mA
1.0
μA
4.0
5
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min
Typ
Max Unit
0.45 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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