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| VRF157FL Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET | |||
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VRF157FL
RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
S
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
FEATURES
⢠Improved Ruggedness V(BR)DSS = 170V
⢠600W with 21dB Typical Gain @ 30MHz, 50V
⢠Excellent Stability & Low IMD
⢠Common Source Conï¬guration
⢠RoHS Compliant
⢠Nitride Passivated
⢠Economical Flangeless Package
⢠Refractory Gold Metallization
⢠High Voltage Replacement for MRF157
50V, 600W, 80MHz
D
S
G
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise speciï¬ed
VRF157FL
Unit
170
V
60
A
±40
V
1350
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min
Typ
Max Unit
170
180
V
3.0
5.0
4.0
mA
4.0
μA
16
mhos
2.9
3.6
4.4
V
Thermal Characteristics
Symbol Characteristic
RθJC
RθJHS
Junction to Case Thermal Resistance
Junction to Sink Thermal Resistance (Use High Efï¬ciency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min
Typ
Max Unit
0.13 °C/W
0.22
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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