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| VRF154FL Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET | |||
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VRF154FL
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF154FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
D
S
S
G
FEATURES
⢠Improved Ruggedness V(BR)DSS = 170V
⢠Designed for 2 - 100MHz Operation
⢠600W with 17dB Typical Gain @ 30MHz, 50V
⢠Excellent Stability & Low IMD
⢠Common Source Conï¬guration
⢠RoHS Compliant
⢠Nitride Passivated
⢠Economical Flangeless Package
⢠Refractory Gold Metallization
⢠High Voltage Replacement for MRF154
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise speciï¬ed
VRF154FL
Unit
170
V
60
A
±40
V
1350
W
-65 to 150
°C
200
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 40A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min
Typ
Max
170
180
3.0
5.0
4.0
4.0
16
2.9
3.6
4.4
Thermal Characteristics
Symbol Characteristic
RθJC
RθJHS
Junction to Case Thermal Resistance
Junction to Sink Thermal Resistance (Use High Efï¬ciency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min
Typ
Max
0.13
0.22
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
V
mA
μA
mhos
V
Unit
°C/W
Microsemi Website - http://www.microsemi.com
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